| PART |
Description |
Maker |
| DS1630Y-70-IND DS1630Y-100-IND DS1630Y-85-IND DS16 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Coilcraft, Inc.
Omron Electronics, LLC
|
| DS1330ABL-70-IND DS1330ABL-100-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1250Y-70 DS1250Y-70-IND DS1250Y-100-IND DS1250AB |
NVRAM (Battery Based)
From old datasheet system
NOVRAM,512KX8,CMOS,DIP,32PIN,PLASTIC
|
Dallas Semiconductor Corp
|
| DS1225Y DS1225Y-170 |
NVRAM (Battery Based) NVRAM中（基于电池
64K Nonvolatile SRAM
IC,NOVRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| M40Z111 M40Z111MH6 M40Z111MH6TR M40Z111WMH6 M40Z11 |
NVRAM CONTROLLER FOR UP TO TWO LPSRAM
5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| CAT22C12P-20 CAT22C12P-30 CAT22C12PI-30 CAT22C12PI |
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
ITT, Corp.
|
| FM1408S-150DSC FM1408-80DSC FM1608-80DSC FM1608-80 |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
STMicroelectronics N.V.
|
| FM25040-C FM25040-PS |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Ramtron International, Corp.
|
| AN1011 |
BATTERY TECHNOLOGY USED IN NVRAM PRODUCTS FROM ST
|
SGS Thomson Microelectronics
|
| M40Z300MH1E M40Z300MH1F M40Z300MH6E M40Z300MH6F M4 |
5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs
|
STMicroelectronics
|
| M40Z30007 M40Z300 M40Z300MQ1E M40Z300MQ6E M40Z300W |
5V or 3V NVRAM supervisor for up to 8 LPSRAMs
|
STMicroelectronics
|
| M41T56M6E M41T56M6F M41T56-07 |
Serial real-time clock with 56 bytes NVRAM
|
STMicroelectronics
|
